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LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
KEY FEATURES Advanced InGaP HBT 5.15-5.85GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~100mA P1dB ~ +25dBm across 5.15~5.85GHz Power Gain ~ 22dB at 5.25GHz & Pout=18dBm Power Gain ~ 18dB at 5.85GHz & Pout=18dBm Total Current < 200mA for Pout=18dBm EVM ~ 4% for 64QAM/ 54Mbps & Pout=18dBm Excellent Temperature Performance Simple Input/Output Match Minimal External Components 2 Small Footprint: 3x3mm Low Profile: 0.9mm
APPLICATIONS/BENEFITS
The LX5503 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band and HiperLAN2 applications in the 5.15-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output prematching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with +25dBm of P1dB and 22dB power gain between 5.15-5.35GHz and 18dB gain up to 5.85GHz.
For +18dBm OFDM output power (64QAM, 54Mbps), the PA provides a very low EVM (Error-Vector Magnitude) of 4%, and consumes less than 200mA total DC current. The LX5503 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5503 an ideal solution for broadband, medium-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications.
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IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
FCC U-NII Wireless IEEE 802.11a HiperLAN2
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LX5503 LX5503
TJ (C) -40 to 85
LQ 16-Pin
Plastic LX5503-LQ
Note: Available in Tape & Reel (3K parts per reel). Append the letter "T" to the part number. (i.e. LX5503-LQT) This device is classified as ESD Level 1 in accordance with MILSTD-883, Method 3015 (HBM) testing. Appropriate ESD procedures should be observed when handling this device.
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
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DC Supply Voltage, RF off................................................................................6V Collector Current.........................................................................................500mA Total Power Dissipation...................................................................................3 W RF Input Power ...........................................................................................10dBm Operation Ambient Temperature ....................................................... -40 to +85oC Storage Temperature ........................................................................ -60 to +150oC
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal.
13 14 15 16 12 11 10 9 8 7 6 5 1 2 3 4
LQ PACKAGE
(Bottom View)
FUNCTIONAL PIN DESCRIPTION Pin Name RF IN Vb1 Vb2 Pin Number 2, 3 6 7 Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. For 5.15-5.35GHz this pin is pre-matched to 50. Bias current control voltage for the first stage. Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge(R1/R2). Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 1 F bypass capacitor as close to the device as possible. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 220pF bypass capacitor as close to the device as possible, followed by a 1F bypass capacitor at the supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc). Power supply for second stage amplifier. The VC2 feedline should be terminated with a 220pF bypass capacitor as close to the device as possible, followed by a 1 F bypass capacitor at the supply side. This pin can be combined with VC1 and VCC pins, resulting in a single supply voltage (referred to as Vc). The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier.
Vcc RF OUT
9 10, 11
Vc1
15
PACKAGE DATA PACKAGE DATA
Vc2
14
GND
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS Test conditions: Vcc=3.3V, Vref=2.86V, Icq=100mA, TA=25C. Parameter Frequency Range Output Power at 1dB Compression Power Gain at Pout=18dBm EVM at Pout=18dBm Total Current at Pout=18dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Noise Figure Ramp-On Time Condition Symbol f Pout Gp
64QAM/54Mbps
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Min. 5.15 24 20
Typ. 25 22 4 200 100 1.6 21 +/-0.2 +/-1 -15 -9 -40 -45 -37 6 100
Max. 5.35
Min. 5.7 24 16
Typ. 25 18 4 180 100 1.6 17 +/-0.5 +/-1
Max. 5.85
Unit GHz dBm dB % mA mA mA dB dB dB
For Icq=100mA Over 100MHz -40 to +85 C
o
Ic_total Icq Iref S21 S21 S21 S11 S22 S12
-10
Pout = 18dBm Pout = 18dBm
NF
10~90% tON Note: All measured data was obtained on a 5 mil GETEK evaluation board without heat sink.
-12 -10 -40 -42 -37 6 100
-10
dB dB dB dBc dBc dB ns
ELECTRICALS ELECTRICALS
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARTS
WWW .Microsemi .C OM
Typical Power Sweep Data at Room Temperature
(Vc=3.3V, Vref=2.86V, Icq=100mA)
30 25 20 15 10 5 0 -5 -22 -20 -18 -16 -14 -12 -10 Pout Gain
Freq.=5.15GHz
-8
-6
-4
-2
0
2
4
6
Pin (dBm)
30 25 20 15 10 5 0 -5 -22 -20 -18 -16 -14 -12 -10
30 25 20 15 10 5 0 -5 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 Pout Gain
Pout Gain
Freq.=5.25GHz
-8
-6
-4
-2
0
2
4
6
Pin (dBm)
Freq.=5.85GHz
CHARTS CHARTS
0
2
4
6
8 10 12
Pin (dBm)
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARTS
WWW .Microsemi .C OM
Typical EVM & Total Current vs. Output Power
(Vc=3.3V, Vref=2.86V, Icq=100mA, 64QAM/54Mbps)
8 7 6 5 4 3 2 1 0 12 13 14 15 16 17 18 19 20 21 100 150 200 EVM_in EVM_out Ictotal 300
250
Freq.=5.15GHz
Pout (dBm)
8 7 6 5 4 3 2 1 0 12
8 7 6 5 4 3 2 1 150 200 EVM_in EVM_out Ictotal
300 EVM_in EVM_out Ictotal
250
200
Freq.=5.25GHz
150
100 13 14 15 16 17 18 19 20 21
300
Pout (dBm)
250
Freq.=5.85GHz
CHARTS CHARTS
0 9 10 11 12 13 14 15 16 17 18 19 20
100
Pout (dBm)
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARTS
WWW .Microsemi .C OM
Typical S-Parameter Data at Room Temperature
25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0
Vc=3.3V Vref=2.81V Icq=80mA
Frequency, GHz
25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0
Vc=3.3V Vref=2.86V Icq=100mA
Frequency, GHz
25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0
Vc=3.3V Vref=2.98V Icq=160mA
CHARTS CHARTS
Frequency, GHz
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARTS
WWW .Microsemi .C OM
Quiescent Current vs. Vref
(VC1=VC2=VCC=Vc=3.3V)
250 225 200 175 150 125 100 75 50 2.75
2.8
2.85
2.9
2.95
3
3.05
Vref (V)
Power Down Isolation
(Vc=3.3V, Vref=0 to 1V, Icq<2A)
0
-10
-20
Vref=0V Vref=1V
-30
-40 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Frequency (GHz)
C CHARTS
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARTS
WWW .Microsemi .C OM
Power, EVM & Current for Low Quiescent Current (Recommended for High Efficiency Operation)
(Vc=3.3V, Vref=2.81V, Icq=80 mA, Freq.=5.25GHz)
Power & Gain vs. Pout
30 25 20 15 10 5 0 -5 -22 -20 -18 -16 -14 -12 -10 Pout Gain
-8
-6
-4
-2
0
2
4
6
Pin (dBm)
EVM & Total Current vs. Pout
8 7 6 5 4 3 2 1 0 14 15 16 17 18 19 20 21 100 150 200 EVM_in EVM_out Ictotal 300
250
CHARTS CHARTS
Pout (dBm)
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 8
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARTS
WWW .Microsemi .C OM
Power, EVM & Current for High Quiescent Current (Recommended for High Gain Operation)
(Vc=3.3V, Vref=2.98V, Icq=160 mA, Freq.=5.25GHz)
Power & Gain vs. Pout
30 Pout Gain 25
20
15
10
5
0 -22 -20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pin (dBm)
EVM & Total Current vs. Pout
8 7 6 5 4 3 2 1 0 13 14 15 16 17 18 19 20 100 150 200 EVM_in EVM_out Ictotal 300
250
CHARTS CHARTS
Pout (dBm)
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 9
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARTS
WWW .Microsemi .C OM
S-Parameter Variation Over Temperature
(Vc=3.3V, Vref=2.98V, Icq=160mA at Room Temperature)
24 23 22 21 20 19 18 17 16 15 14 13 12 11 10
- oC -40 +25oC +85oC
4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0
Frequency (GHz)
Power & Gain Variation Over Temperature
(Vc=3.3V, Vref=2.86V, Icq=100mA at Room Temperature, Freq.=5.25GHz)
26 24 22 20 18 16 14 12 -40 +25 o +85 o
o
C CHARTS
10
0
2
4
6
8
10 12 14 16 18 20 22 24 26 Pout (dBm)
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 10
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARTS
WWW .Microsemi .C OM
Small-Signal Gain vs. Supply Voltage
(Vref=2.86V, Icq=100mA for Vc=3.3V)
22
21.5
21
20.5
20 3 3.1 3.2 3.3 3.4 3.5 3.6
Vc (V)
P1dB vs. Supply Voltage
(Vref=2.86V, Icq=100mA for Vc=3.3V)
27 26.5
26 25.5 25 24.5
C CHARTS
24 3 3.3 3.6
Vc (V)
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 11
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
MECHANICAL DRAWING
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LQ
16-Pin MLPQ Plastic (3x3mm EP)
A
F
B
E
H G D1 D C I
Dim A B C D D1 E F G H I
MILLIMETERS MIN MAX 3.00 BSC 3.00 BSC 0.80 1.00 0.18 0.30 0 0.05 1.30 1.55 0.18 0.30 0.50 BSC 1.30 1.55 0.30 0.50
INCHES MIN MAX 0.118 BSC 0.118 BSC 0.031 0.039 0.007 0.011 0 0.002 0.051 0.061 0.007 0.011 0.019 BSC 0.051 0.061 0.011 0.020
Note:
1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006") on any side. Lead dimension shall not include solder coverage.
MECHANICALS MECHANICALS
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 12
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
NOTES
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NOTES NOTES
PRODUCTION DATA - Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time.
Copyright 2000 Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 13
Signat ure invalid
KD
Digitally signed by KD DN: cn=KD, o=Microse mi, c=US Date: 2002.09.1 6 16:06:23 -07'00'

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